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JANTXV1N5809US Microchip DIODE GEN PURP 100V 3A B-MELF
JANTXV1N5809US Images
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  • Manufacturer: Microchip
  • Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single Package / Case: SQ-MELF, B
  • Description: DIODE GEN PURP 100V 3A B-MELF
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JANTXV1N5809US Datasheet
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JANTXV1N5809US Specifications:
  • Manufacturer Product Number: JANTXV1N5809US
  • Mfr: Microchip Technology
  • Detailed Description: DIODE GEN PURP 100V 3A B-MELF
  • Product Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
  • Package: Bulk
  • Series: Military, MIL-PRF-19500/477
  • Part Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Operating Temperature - Junction: -65°C ~ 175°C
  • JANTXV1N5809US Microchip, DIODE GEN PURP 100V 3A B-MELF, Discrete Semiconductor Products~Diodes - Rectifiers - Single
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