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APT45GP120B2DQ2G Images
- Manufacturer: Microchip
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-3 Variant
- Description: IGBT 1200V 113A 625W TMAX
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APT45GP120B2DQ2G Specifications:
- MfrPart.: APT45GP120B2DQ2G
- Mfr: Microchip Technology
- Description: IGBT 1200V 113A 625W TMAX
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: POWER MOS 7®
- PartStatus: Active
- IGBTType: PT
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 113 A
- Current-CollectorPulsed(Icm): 170 A
- Vce(on)(Max)@VgeIc: 3.9V @ 15V, 45A
- Power-Max: 625 W
- SwitchingEnergy: 900µJ (on), 905µJ (off)
- InputType: Standard
- GateCharge: 185 nC
- Td(on/off)@25°C: 18ns/100ns
- TestCondition: 600V, 45A, 5Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-3 Variant
- APT45GP120B2DQ2G Microchip, IGBT 1200V 113A 625W TMAX, Discrete Semiconductor Products~Transistors - IGBTs - Single
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