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APT33GF120B2RDQ2G Images
- Manufacturer: Microchip
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-3 Variant
- Description: IGBT 1200V 64A 357W TMAX
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APT33GF120B2RDQ2G Specifications:
- MfrPart.: APT33GF120B2RDQ2G
- Mfr: Microchip Technology
- Description: IGBT 1200V 64A 357W TMAX
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: -
- PartStatus: Active
- IGBTType: NPT
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 64 A
- Current-CollectorPulsed(Icm): 75 A
- Vce(on)(Max)@VgeIc: 3V @ 15V, 25A
- Power-Max: 357 W
- SwitchingEnergy: 1.315mJ (on), 1.515mJ (off)
- InputType: Standard
- GateCharge: 170 nC
- Td(on/off)@25°C: 14ns/185ns
- TestCondition: 800V, 25A, 4.3Ohm, 15V
- ReverseRecoveryTime(trr): -
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-3 Variant
- APT33GF120B2RDQ2G Microchip, IGBT 1200V 64A 357W TMAX, Discrete Semiconductor Products~Transistors - IGBTs - Single
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