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2N6301E3 Images
- Manufacturer: Microchip
- Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single Package/Case: TO-213AA, TO-66-2
- Description: NPN DARLINGTON POWER SILICON TRA
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2N6301E3 Specifications:
- MfrPart.: 2N6301E3
- Mfr: Microchip Technology
- Description: NPN DARLINGTON POWER SILICON TRA
- Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
- Package: Bulk
- Series: -
- PartStatus: Active
- TransistorType: NPN - Darlington
- Current-Collector(Ic)(Max): 500 µA
- Voltage-CollectorEmitterBreakdown(Max): 80 V
- VceSaturation(Max)@IbIc: 3V @ 80mA, 8A
- Current-CollectorCutoff(Max): 500µA
- DCCurrentGain(hFE)(Min)@IcVce: 750 @ 4A, 3V
- Power-Max: 75 W
- Frequency-Transition: -
- OperatingTemperature: -55°C ~ 200°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-213AA, TO-66-2
- 2N6301E3 Microchip, NPN DARLINGTON POWER SILICON TRA, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
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